2.45Ghz Microwave Plasma Cleaner NE-MW70
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DESCRIPTION

Microwave Plasma Cleaner NE-MW70 consists of five parts: shell frame system, microwave discharge system, vacuum system, gas supply system and control system. The NE-MW70 is controlled by industrial computer + PLC, and the operation mode includes automatic mode and manual mode. In automatic mode, different process parameters are managed according to the recipe method, and 50 groups of different recipes can be stored at the same time. The equipment is designed with safety functions such as working gas exhaustion alarm, compressed air pressure lower than the set value alarm, pump thermal overload alarm, and reaction chamber leakage rate excessive alarm.

NE-MW70 is a large industrial vacuum microwave plasma processing system. Excited by 2.45 GHz microwaves, it generates plasma without electrodes, with low self-bias and minimal ion impact, ideal for sensitive device cleaning. It offers high-efficiency, non-destructive surface cleaning, activation, modification, deoxidation, and photoresist stripping.

Microwave Plasma Cleaner NE-MW70 is a green and pollution-free high-precision dry cleaning method that can effectively remove surface contaminants and avoid electrostatic damage. Compared with plasma generated by low-frequency or radio frequency discharge, microwave plasma cleaning has the following advantages:

  1.  No internal electrodes, which can avoid discharge pollution, high energy conversion efficiency, and can produce a large range of high-density plasma; 

  2. Non-destructive process, extremely small self-bias; 

  3. High electron density, fast preparation rate of various functional thin film materials; 

  4. Small ion impact, little damage to devices; 

  5. No ultraviolet radiation.

Because of the above advantages, microwave plasma is irreplaceable in some processes, such as degumming and cleaning in the process of some electrically sensitive devices. Due to the high excitation frequency, small ion kinetic energy, and the chemical plasma effect that accounts for the main part in microwave plasma, more uniform and effective cleaning can be achieved. There is no physical impact and sputtering caused by physical plasma during cleaning. In the process of cleaning of devices with high reliability requirements, especially sensitive circuits, microwave plasma cleaning machines have become the key and preferred equipment.

Applications

  1. Semiconductor chip substrate cleaning and pre - packaging treatment.

  2. Wafer film removal, de - bonding, activation.

  3. MEMS sacrificial layer removal.

  4. Material surface cleaning, activation, and modification.

PARAMETER

ENCLOSUREDimensions1240 × 1200 × 1800 mm(L × W × H)

PLASMA POWER SUPPLY 

Power0-1000W, continuously variable output
Frequency2.45GHz

CHAMBER

MaterialAluminum Alloy
Dimensions390 × 470 × 400mm(L × W × H), 73L
Sample Stage DimensionsΦ330 mm

PROCESS CONTROL

InterfacePLC with 10'' Touch Screen HMI
Gas Channelsx2 MFC, compatible with O₂, Ar, N₂, H₂, etc.
Pressure GaugePirani Sensor

SERVICES

Electrical380 VAC, 50-60Hz
Power CordSuited to region
ComplianceCE


PRODUCT FEATURES

01

Fast Deposition Rate

Fast Deposition Rate

02

Good Film Quality

Good Film Quality

03

Process Stability

Process Stability

04

High Productivity

High Productivity

05

Fully Automatic

Fully Automatic

06

Simple Operation

Simple Operation

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